********************************************************************************************* ********************************************************************************************* **** **** **** **** **** Modelcard for UTSOI test **** **** **** **** Copyright CEA LETI 2013 **** **** Unauthorized Reproduction and Communication strictly prohibited **** **** **** **** Date: November 2013 **** **** **** **** **** ********************************************************************************************* **** **** **** IC simulator: Hspice 2013.03 SP2 **** **** Model version: UTSOI v1.1.3 **** **** **** ********************************************************************************************* ****************************************** nfet ****************************************** .subckt nfet D G S B w=80.0e-9 l=20.0e-9 as=0 ad=0 ps=0 pd=0 nf=1 sa=0 sb=0 sd=0 M1 D G S B utsoimod L = 'l' W = 'w' ASOURCE = 'as' + ADRAIN = 'ad' SA = 'sa' SB = 'sb' SD = 'sd' + NF = 'nf' .model utsoimod nmos level=76 ********* Model selection + VERSION = 1.13 SWSCALE = 1.0 ********* Switch for parasitic effects + SWIGATE = 0.0 SWGIDL = 0.0 SWSHE = 0.0 SWRSMOD = 1.0 + SWIGN = 1.0 ********* Device type and reference temperature + TYPE = 1.0 TR = 25.0 ********* Geometry scaling parameters + LVARO = 0.000 LVARL = 0.000 LVARW = 0.000 LAP = 3.000n + WVARO = 0.000 WVARL = 0.000 WVARW = 0.000 WOT = 0.000 + DLQ = 0.000 DWQ = 0.000 ********* Stress Model Parameters + SAREF = 1.000u SBREF = 1.000u WLOD = 0.000 KUO = 0.000 + KVSAT = 0.000 TKUO = 0.000 LKUO = 0.000 WKUO = 0.000 + PKUO = 0.000 LLODKUO = 1.000 WLODKUO = 1.000 KVTHO = 0.000 + LKVTHO = 0.000 WKVTHO = 0.000 PKVTHO = 0.000 LLODVTH = 1.000 + WLODVTH = 1.000 STETAO = 0.000 LODETAO = 1.000 ********* Process parameters + VFBO = -200.0m VFBL = -4.00m VFBLEXP = 1.000 VFBW = 0.000 + VFBLW = 0.000 STVFBO = -2.000m STVFBL = 3.000m STVFBW = 0.000 + STVFBLW = 0.000 TOXO = 1.000n TSIO = 6.000n TBOXO = 20.00n + NSIO = 0.000 NSUBO = 2.000E+18 DVFBBO = 300.0m CTO = 0.000 + TOXOVO = 1.000n LOV = 3.000n NOVO = 1.000E+20 ********* Quantum mechanical effect + QMC = 1.000 ********* Interface coupling parameters + CICO = 1.200 CICL = 0.000 CICLEXP = 1.000 CICW = 0.000 + CICLW = 0.000 ********* SCE parameters + PSCEL = 60.00u PSCELEXP = 2.000 PSCEW = 0.000 ********* DIBL parameters + CFL = 20.00u CFLEXP = 2.000 CFW = 0.000 CFBO = 100.0m + STCFO = 0.000 ********* Mobility parameters + UO = 27.00m BETNL = -8.000m BETNLEXP = 1.000 BETNW = 0.000 + STBETO = 1.000 STBETL = 0.000 STBETW = 0.000 STBETLW = 0.000 + MUEO = 300.0m STMUEO = -500.0m THEMUO = 1.500 STTHEMUO = 0.000 + CSO = 8.000 CSBO = -100.0m THECSO = 3.000 STCSO = 0.000 + STTHECSO = 0.000 XCORO = 0.000 STXCORO = 0.000 FETAO = 1.000 ********* Series Resistance parameters + RSW1 = 60.00 RSW2 = 0.000 RSGO = 0.000 THERSGO = 2.000 + STRSO = 0.000 ********* Velocity Saturation Parameters + THESATO = 0.000 THESATL = 4.000m THESATLEXP = 1.000 THESATW = 0.000 + THESATLW = 0.000 THESATGO = 1.000 THESATBO = 0.000 STTHESATO = -400.0m + STTHESATL = 0.000 STTHESATW = 0.000 STTHESATLW = 0.000 ********* Saturation Voltage Parameters + AXO = 10.000 AXL = 50.0m AXLEXP = 1.000 ********* Channel Length Modulation (CLM) Parameters + ALPL1 = 2.000m ALPLEXP = 1.500 ALPL2 = 1.000m ALPW = 0.000 + ALP1L1 = 100.0u ALP1LEXP = 500.0m ALP1L2 = 50.00m ALP1W = 0.000 + VPO = 10.00m ********* Gate Current Parameters + GCOO = 0.000 IGINVLW = 0.000 IGOVINVW = 0.000 IGOVACCW = 0.000 + GC2CHO = 0.375 GC3CHO = 0.063 GC2OVO = 0.375 GC3OVO = 0.063 + STIGO = 0.000 CHIBO = 1.900 ********* Gate Induced Drain/Source Leakage (GIDL) Parameters + AGIDLW = 0.000 BGIDLO = 41.00 STBGIDLO = 0.000 CGIDLO = 0.000 ********* Charge Model Parameters + CGBOVL = 0.000 CFRW = 200.0a ********* Self Heating Effect Parameters + RTHO = 1.500K RTHL = 0.000 RTHW = 0.000 RTHLW = 0.000 + CTHO = 500.0p STRTHO = 0.000 ********* Noise Parameters + FNTO = 1.000 NFALW = 8.000E+22 NFBLW = 0.000 NFCLW = 0.000 .ends nfet ****************************************** pfet ****************************************** .subckt pfet D G S B w=80.0e-9 l=20.0e-9 as=0 ad=0 ps=0 pd=0 nf=1 sa=0 sb=0 sd=0 m1 D G S B utsoimod L = 'l' W = 'w' ASOURCE = 'as' + ADRAIN = 'ad' SA = 'sa' SB = 'sb' SD = 'sd' + NF = 'nf' .model utsoimod pmos level=76 ********* Model selection + VERSION = 1.13 SWSCALE = 1.0 ********* Switch for parasitic effects + SWIGATE = 0.0 SWGIDL = 0.0 SWSHE = 0.0 SWRSMOD = 1.0 + SWIGN = 1.0 ********* Device type and reference temperature + TYPE = -1.0 TR = 25.0 ********* Geometry scaling parameters + LVARO = 0.000 LVARL = 0.000 LVARW = 0.000 LAP = 3.000n + WVARO = 0.000 WVARL = 0.000 WVARW = 0.000 WOT = 0.000 + DLQ = 0.000 DWQ = 0.000 ********* Stress Model Parameters + SAREF = 1.000u SBREF = 1.000u WLOD = 0.000 KUO = 0.000 + KVSAT = 0.000 TKUO = 0.000 LKUO = 0.000 WKUO = 0.000 + PKUO = 0.000 LLODKUO = 1.000 WLODKUO = 1.000 KVTHO = 0.000 + LKVTHO = 0.000 WKVTHO = 0.000 PKVTHO = 0.000 LLODVTH = 1.000 + WLODVTH = 1.000 STETAO = 0.000 LODETAO = 1.000 ********* Process parameters + VFBO = -100.0m VFBL = -4.00m VFBLEXP = 1.000 VFBW = 0.000 + VFBLW = 0.000 STVFBO = -2.000m STVFBL = 3.000m STVFBW = 0.000 + STVFBLW = 0.000 TOXO = 1.000n TSIO = 6.000n TBOXO = 20.00n + NSIO = 0.000 NSUBO = 2.000E+18 DVFBBO = 300.0m CTO = 0.000 + TOXOVO = 1.000n LOV = 3.000n NOVO = 1.000E+20 ********* Quantum mechanical effect + QMC = 1.000 ********* Interface coupling parameters + CICO = 1.200 CICL = 0.000 CICLEXP = 1.000 CICW = 0.000 + CICLW = 0.000 ********* SCE parameters + PSCEL = 60.00u PSCELEXP = 2.000 PSCEW = 0.000 ********* DIBL parameters + CFL = 20.00u CFLEXP = 2.000 CFW = 0.000 CFBO = 100.0m + STCFO = 0.000 ********* Mobility parameters + UO = 15.00m BETNL = -1.000m BETNLEXP = 1.000 BETNW = 0.000 + STBETO = 1.000 STBETL = 0.000 STBETW = 0.000 STBETLW = 0.000 + MUEO = 300.0m STMUEO = -500.0m THEMUO = 1.500 STTHEMUO = 0.000 + CSO = 8.000 CSBO = -100.0m THECSO = 3.000 STCSO = 0.000 + STTHECSO = 0.000 XCORO = 0.000 STXCORO = 0.000 FETAO = 1.000 ********* Series Resistance parameters + RSW1 = 60.00 RSW2 = 0.000 RSGO = 0.000 THERSGO = 2.000 + STRSO = 0.000 ********* Velocity Saturation Parameters + THESATO = 0.000 THESATL = 2.000m THESATLEXP = 1.000 THESATW = 0.000 + THESATLW = 0.000 THESATGO = 1.000 THESATBO = 0.000 STTHESATO = -400.0m + STTHESATL = 0.000 STTHESATW = 0.000 STTHESATLW = 0.000 ********* Saturation Voltage Parameters + AXO = 10.000 AXL = 50.0m AXLEXP = 1.000 ********* Channel Length Modulation (CLM) Parameters + ALPL1 = 2.000m ALPLEXP = 1.500 ALPL2 = 1.000m ALPW = 0.000 + ALP1L1 = 100.0u ALP1LEXP = 500.0m ALP1L2 = 50.00m ALP1W = 0.000 + VPO = 10.00m ********* Gate Current Parameters + GCOO = 0.000 IGINVLW = 0.000 IGOVINVW = 0.000 IGOVACCW = 0.000 + GC2CHO = 0.375 GC3CHO = 0.063 GC2OVO = 0.375 GC3OVO = 0.063 + STIGO = 0.000 CHIBO = 1.900 ********* Gate Induced Drain/Source Leakage (GIDL) Parameters + AGIDLW = 0.000 BGIDLO = 41.00 STBGIDLO = 0.000 CGIDLO = 0.000 ********* Charge Model Parameters + CGBOVL = 0.000 CFRW = 200.0a ********* Self Heating Effect Parameters + RTHO = 1.500K RTHL = 0.000 RTHW = 0.000 RTHLW = 0.000 + CTHO = 500.0p STRTHO = 0.000 ********* Noise Parameters + FNTO = 1.000 NFALW = 8.000E+22 NFBLW = 0.000 NFCLW = 0.000 .ends pfet