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CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges
Gallium Nitride Seen as Highly Efficient Replacement for Silicon in Wide Range of Consumer and Industrial Uses
"Carbon-Related pBTI Degradation Mechanisms in GaN-on-Si E-Mode MOSc-HEMT"
This paper investigated the physics behind positive-Bias Temperature Instability (pBTI) effects that occur when transistor gates are positively biased, to determine the root cause of this effect and to minimize it.
We showed that the instabilities of voltage threshold (Vth) under positive gate stress were caused by two populations of traps," said Aby-Gaël Viey, an author of the paper. the first is related to defects in the gate oxide, which is a known effect, and the second to the presence of carbon atoms in nitrogen sites in GaN at the gate interface, which was a discovery, thus confirming the conclusions presented at IEDM.
In addition, our more recent work demonstrated that it is possible to accurately model and predict these threshold voltage instabilities with great precision," Viey added. "Indeed, the known model of capture emission time (CET) maps were used to confirm the presence of the two populations of traps and predict pBTI degradation (Vth shift) under a certain gate/temperature stress condition.
"A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMT"
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Acteur majeur de la recherche, du développement et de l'innovation, le CEA intervient dans quatre grands domaines : énergies bas carbone, défense et sécurité, technologies pour l’information et technologies pour la santé.