Sunday, October 25, 2026
8:10 a.m. – 8:40 a.m.
Room 236
(Level 2, BMO Centre)
C. Cardoux, P. Goulain, L. Bonin, G. Persenda, L. Casiez, J. Chretien, J. M. Hartmann, N. Coudurier, P. Rodriguez, A. Vandeneynde
Monolithic Electrically Pumped Group-IV Lasers on Silicon: Unlocking High-Temperature Operation through Current Injection
Wednesday, October 28, 2026
8:30 a.m. – 8:50 a.m.
Room 236
(Level 2, BMO Centre)
P. Tchoulfian, D. Barge, J. M. Hartmann, S. Kerdilès, V. Larrey, F. Fournel, V. Loup, P. Hauchecorne, A. M. Papon, A. Thouvard, J. Richy, Y. Mazel, N. Gauthier, A. Fraczkiewicz, G. Pares
Fabrication of a Si/SiGe Channel Stack Using Wafer-to-Wafer Bonding and BESOI Technique for CFET Applications
Wednesday, October 28, 2026
5:20 p.m. – 5:40 p.m.
Room 236
(Level 2, BMO Centre)
M. Bardet, J. Lespiaux, N. Gauthier, E. Dos Reis, C. Lecouvey, V. Lapras, F. Bringuier, J. M. Hartmann
On the Use of N2 As a Carrier Gas for Low Temperature SiGe:B Selective Epitaxial Growth during the Production of Advanced p-Type FD-SOI Devices
Thursday, October 29, 2026
8:20 a.m. – 8:50 a.m.
Room 236
(Level 2, BMO Centre)
J. Kanyandekwe, B. Mohamad, V. Lapras, F. Bringuier, Z. Chalupa, T. Mota Frutuoso, K. Romanjek, J. Lacord, T. Marion, L. Saidi, L. Laraignou, P. Hauchecorne, J. Lespiaux, N. Gauthier, T. Cabaret, M. Dartois, A. Raison, M. Jourdan, V. Loup, A. Bond, J. Richy, A. Thouvard, L. Couture, A. Blot-Saby, O. Glorieux, A. Lassenberger, N. Bernier, G. Persson, D. Cooper, M. Dryhailo, A. Grenier, T. Dewolf, T. Muller, A. Andre, J. Marchand, T. Monniez, S. Jarjayes, A. S. Royet, R. Chouk, O. Cueto, M. C. Cyrille, C. Fenouillet-Beranger, J. M. Hartmann
Selective Epitaxial Growth of Very Highly Doped Sip Raised Sources and Drains Yielding Low Ron and Significant idsat Gains in 10 Nm Fd-SOI nMOS Transistors