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A GaN power switch driver was recently integrated into a demonstrator system for a high-temperature application. This research will create new possibilities for the automotive, aeronautics, and mining exploration (drilling) industries.
Scientists at Leti, a CEA Tech institute, have made a major leap forward in energy conversion electronics with a new GaN transistor capable of handling up to 650 volts.
Leti, a CEA Tech institute, won an Innovation Award for its GaN microdisplay at this year’s TechConnect World in Washington D.C. The award-winning development—a world first—gives exceptional luminosity to a screen of such small size.
CEA is a French government-funded technological research organisation in four main areas: low-carbon energies, defense and security, information technologies and health technologies. A prominent player in the European Research Area, it is involved in setting up collaborative projects with many partners around the world.